具有 8V UVLO 的 1A、100V 半橋柵極驅(qū)動(dòng)器
| Bus voltage (Max) (V) | 90 |
| Power switch | MOSFET |
| Input VCC (Min) (V) | 8 |
| Input VCC (Max) (V) | 14 |
| Peak output current (A) | 1 |
| Rise time (ns) | 15 |
| Operating temperature range (C) | -40 to 125 |
| Undervoltage lockout (Typ) | 8 |
| Rating | Catalog |
| Number of channels (#) | 2 |
| Fall time (ns) | 15 |
| Prop delay (ns) | 25 |
| Iq (uA) | 10 |
| Input threshold | TTL |
| Channel input logic | TTL |
| Negative voltage handling at HS pin (V) | -1 |
| Driver configuration | Dual, Independent |
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- 1A peak Output Current (1.0A Sink / 1.0A Source)
- Independent TTL Compatible Inputs
- Bootstrap Supply Voltage to 108V DC
- Fast Propagation Times (30 ns Typical)
- Drives 1000 pF Load with 15ns Rise and Fall Times
- Excellent Propagation Delay Matching (2 ns Typical)
- Supply Rail Under-Voltage Lockout
- Low Power Consumption
- Pin Compatible with ISL6700
- Industry Standard SOIC-8 and Thermally Enhanced WSON-8 Package
The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the SOIC and the thermally enhanced WSON packages.
